Applied Materials Takes RTP Technology to Next Level with New Radiance Centura System
SANTA CLARA, Calif.--(BUSINESS WIRE)--Sept. 14, 1999--
Radiance(TM) Centura(R) Addresses Challenging Requirements
for 0.13 Micron Chip Manufacturing with Advanced Technology
and Productivity
Applied Materials, Inc. (Nasdaq:AMAT) introduces the Radiance Centura, a new RTP (rapid thermal processing) system that leapfrogs existing RTP technologies to achieve a new level of performance for advanced, 0.13 micron and below chip manufacturing.
"The next several generations of transistors will require an
entire spectrum of new RTP capabilities including tighter temperature
uniformity and control, faster ramp and cool-down rates, and
closed-loop control at lower temperatures," said Dr. Chris Gronet,
vice president of the Thermal Processing Organization at Applied
Materials.
"Radiance Centura, which is based on our production-proven RTP XE
technology, easily meets these new requirements, enabling advanced
applications such as ultra-shallow junctions and gate oxides, as well
as advanced silicides, with extendibility beyond 0.1 micron
geometries."
As the industry moves to extremely short anneal times in advanced
devices, the process of ramping up and cooling down account for a
significant fraction of the total process time and thus control
overall process uniformity. The formation of ultra-shallow junctions,
for example, requires precise, rapid (spike) implant anneals that
limit high temperature exposure of the wafer to a few seconds.
To enable these new device designs, the Radiance Centura features
significant advancements in temperature control, even at high
temperature ramp rates, for exceptional within-wafer uniformity and
wafer-to-wafer repeatability.
The Radiance system's fast wafer rotation (240 rpm) and a high
speed (100 Hz), multi-point, closed-loop temperature control system
provide tight temperature uniformity during ramps. Rapid ramp
(250(degree)C/s) and cool-down (90(degree)C/s) rates limit thermal
exposure of the wafer to less than 3 seconds above 950(degree)C for a
1050(degree)C spike anneal. The Radiance Centura also enables closed
loop control at process temperatures below 280(degree)C for
next-generation cobalt or nickel silicides.
"All of our improvements are aimed at higher productivity and
lower operating costs in our customers' production fab environments,"
said Dr. Kelly Truman, director of Global Product Management and
Strategic Technology for Applied Materials' Thermal Processing
Organization.
"Besides the significant leaps in process performance and
flexibility, the Radiance Centura system makes day-to-day fab
operation much easier. The system can be quickly qualified and
calibrated, while process recipe setup, matching, and transfer are
also much improved. Operators can tune the process and cut setup cost
dramatically with the new system."
Enhanced temperature uniformity across the wafer can improve
yield by permitting better control of device parameters as well as
gate oxide thickness and uniformity at sub-angstrom levels. The
Radiance's temperature control system features integrated multi-point
temperature measurement and emissivity compensation at sampling rates
up to ten times greater than competitive systems. These features
improve overall temperature uniformity over the entire range of wafer
backside emissivities; this is especially important to customers
manufacturing multiple types of devices.
Radiance features a variety of advancements that improve hardware
matching and reliability and reduce operating cost. Wafer rotation is
performed by a revolutionary magnetic levitation (mag-lev) mechanism
developed by SatCon Technology Corp. and available exclusively on the
Radiance system. The mag-lev technology provides better uniformity
during ramp up and increased reliability with less maintenance.
Other features included on the Radiance are: SmartSensor(TM), a
technology that distinguishes between various types of wafers and sets
heating profiles automatically; and TempMatch(TM), a unique
calibration unit for highly accurate system-to-system matching.
The Radiance Centura system uses a single process chamber for all
applications, eliminating the need to use separate atmospheric and
reduced-pressure chambers for annealing and/or oxidation applications.
The system continues Applied Materials' extension of RTP technology
into enabling the growth of critical oxide film used in transistor
structures that were previously performed by batch furnaces. In Situ
Steam Generation (ISSG) oxidation technology, for example, is gaining
favor as a preferred method of growing ultra-thin (25A) gate oxides.
Also, ISSG oxides offer unique material properties such as improved
corner rounding and reduced stress for shallow trench isolation (STI)
applications that cannot be duplicated by traditional furnace
technology.
According to Dataquest, a market research firm, the market for
RTP equipment was $224 million in 1998, and is projected to grow to
$600 million by 2003. Applied Materials' RTP Centura is the global
market leader in RTP for semiconductor manufacturing.
Applied Materials, Inc. is a Fortune 500 global growth company
and the world's largest supplier of wafer fabrication systems and
services to the global semiconductor industry. Applied Materials is
traded on the Nasdaq National Market System under the symbol "AMAT."
Applied Materials' web site is http://www.appliedmaterials.com.
--30--aj/sf* CONTACT: Applied Materials, Inc. Betty Newboe, 408/563-0647 (Editorial/Media) Carolyn Schwartz, 408/748-5227 (Financial Community) KEYWORD: CALIFORNIA INDUSTRY KEYWORD: COMPUTERS/ELECTRONICS COMED PRODUCT