Applied Materials' High-k/Metal Gate Technology Selected by STMicroelectronics for 28nm Chip Production
HKMG is an emerging technology that allows the continuation of Moore’s Law, enabling faster switching speed while reducing device power consumption. Replacing traditional silicon dioxide as the main gate dielectric, the new HKMG structure integrates a hafnium-based high-k material with a new metal gate electrode to increase capacitance and control leakage current.
“We are impressed and extremely pleased with the speed at which Applied
has developed integrated high-k/metal gate solutions that address our
28nm device requirements,” said Joël Hartmann,
Major challenges to implementing HKMG technology for the industry have been the development of manufacturable processes using new materials that can provide optimum transistor characteristics while maintaining the integrity of the dielectric stack. Applied has developed a multi-step process combining its leading-edge technologies to provide ST with a robust and reliable HKMG solution. For more information on Applied’s HKMG technology, visit: www.appliedmaterials.com/products/Highk_MetalGate_4.html.
“This important collaboration with ST demonstrates that our high-k/metal
gate solution can be successfully integrated in their logic devices with
superior performance,” said
Source:
Applied Materials, Inc.
Betty Newboe, 408-563-0647 (editorial/media)
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