News Release

SANTA CLARA, Calif.--(BUSINESS WIRE)--Nov. 6, 2000--

SIP(TM) PVD Provides Enabling Technology and High-Throughput,

         Cost-Effective Processes for 


    Applied Materials, Inc., the leading supplier of metal deposition
systems to the semiconductor industry, today announced its new SIP(TM)
(self-ionized plasma) PVD (physical vapor deposition) technology for
depositing critical barrier/seed films in copper-based interconnects
and liner/barrier layers in aluminum structures. Using a new magnetron
plasma source, process chamber and next-generation e-chuck design, SIP
combines advanced, 0.15 micron and beyond technology with lower cost
of operation while enabling throughputs of up to 70 wph (wafers per
hour).


    "This new SIP technology shows our ongoing commitment to providing
customers with innovative PVD solutions to meet their most advanced
processing requirements," said Dr. Fusen Chen, vice president and
general manager of Applied Materials' Aluminum, Copper and
Liner/Barrier Product Group. "SIP extends PVD technology into the 100
nanometer regime by delivering the conformal film coverage required
for lining high aspect ratio interconnect structures. In addition,
we've made several advancements in chamber design that significantly
enhance the productivity and cost efficiency of the technology."


    The SIP chamber's new magnetron source increases ionization of the
metal atoms in the chamber, providing good step coverage in small
geometry structures. A new generation e-chuck design with bias and low
temperature capability ensures excellent thermal control and minimal
film overhang.


    For copper-based devices, SIP tantalum/tantalum nitride (Ta/TaN)
and SIP copper seed layers are used for lining the interconnect
structure to prevent contamination and enhance subsequent bulk copper
fill. This completely integrated sequence, preceded by a reactive
pre-clean, operates under high vacuum, providing excellent film
adhesion and oxide-free interfaces for maximum device speed and high
film reliability.


    For aluminum-based interconnect applications, SIP technology is
used to deposit titanium (Ti) as an underlayer in an advanced aluminum
slab/interconnect stack structure. This layer provides exceptional
electromigration resistance for high reliability. In addition, SIP is
used to deposit Ti and titanium nitride (TiN) liner/barrier films in
contact and via structures for subsequent bulk tungsten fill. Both
processes are performed using a single SIP chamber, enabling
simplified operation and increased user flexibility.


    SIP technology is available on Applied Materials' Endura(R)
platform, as well as the company's new generation Endura SL(TM)
system, which features dual-blade robots for faster handling and
accommodates up to six process chambers.


    Commitments for the SIP system have been received from customers
in the U.S., Taiwan and Japan. The SIP technology is also retrofitable
to existing Endura PVD "widebody" chambers, enabling customers to
cost-effectively extend their installed base of systems to meet the
requirements of several more device generations.


    The market for PVD systems totaled $1.24 billion in 1999,
according to Dataquest, a market research firm, and is projected to
grow to $3.09 billion by 2002. In a report recently released from
Dataquest, Applied Materials was ranked the global market share leader
in PVD for 1999.


    Applied Materials (Nasdaq:AMAT) is a leader of the Information Age
and the world's largest supplier of products and services to the
global semiconductor industry. Applied Materials' web site is
http://www.appliedmaterials.com.


    Note to Editors: In the sub-headline, the symbol in front of "0.15
Micron Copper" is a "less than" symbol. This symbol might not appear
properly in all systems.


    --30--nj/sf*


CONTACT:
Betty Newboe, 408/563-0647 (editorial/media) 
Carolyn Schwartz, 408/748-5227 (financial community)