Applied Materials Extends Copper PVD Technology Leadership to 22nm Node
“Future scaling of copper interconnects depends on finding a reliable,
cost-effective way to deposit barrier and seed layers below 45nm,” said
Effective barrier and seed layer deposition is critical to assuring the speed and reliability of copper interconnects, since it prevents copper diffusion and provides a quality nucleation layer for subsequent bulk copper fill. Key to the new Endura CuBS RFX system’s high performance is its new EnCoRe™ II RFX Cu seed process chamber. Employing a novel magnetron trajectory and a proprietary ion flux control system to enhance film coverage and morphology, the process delivers smooth, continuous seed layers for void-free copper gap fill and optimized device reliability.
Applied’s breakthrough Endura CuBS PVD system, launched in 1997, enabled a major leap forward in barrier/seed deposition capability by integrating the complete sequence on a single, high-vacuum platform. With almost 500 copper barrier/seed systems in use by the vast majority of copper chip manufacturers worldwide, Applied has demonstrated its ability to extend cost-effective PVD technology over multiple technology generations.
For more information, visit www.appliedmaterials.com/products/endura_cubs_rfx_4.html.
* PVD = physical vapor deposition
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Source:
Applied Materials, Inc.
Betty Newboe, 408-563-0647 (editorial/media)
Michael
Sullivan, 408-986-7977 (financial community)